DocumentCode
1543593
Title
57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs
Author
Jäger, R. ; Grabherr, M. ; Jung, C. ; Michalzik, R. ; Reiner, G. ; Weigl, B. ; Ebeling, K.J.
Author_Institution
Dept. of Optoelectron., Ulm Univ., Germany
Volume
33
Issue
4
fYear
1997
fDate
2/13/1997 12:00:00 AM
Firstpage
330
Lastpage
331
Abstract
Vertical-cavity surface-emitting lasers with reduced effective index guiding of the optical wave show a record performance. GaAs based 850 nm emission wavelength VCSELs are fabricated using solid source MBE and carbon p-type doping. Depending on device design maximum room temperature conversion efficiencies of 57%, an operating range from -80°C up to +185°C, and threshold currents below 500 μA from -40 to +80°C have been obtained
Keywords
III-V semiconductors; gallium arsenide; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; quantum well lasers; surface emitting lasers; -80 to 185 C; 500 muA; 57 percent; 850 nm; AlGaAs:C; C p-type doping; GaAs; VCSEL; conversion efficiencies; oxide-confined laser; solid source MBE; surface-emitting lasers; vertical-cavity SEL; wallplug efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970193
Filename
583507
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