Title :
57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs
Author :
Jäger, R. ; Grabherr, M. ; Jung, C. ; Michalzik, R. ; Reiner, G. ; Weigl, B. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
2/13/1997 12:00:00 AM
Abstract :
Vertical-cavity surface-emitting lasers with reduced effective index guiding of the optical wave show a record performance. GaAs based 850 nm emission wavelength VCSELs are fabricated using solid source MBE and carbon p-type doping. Depending on device design maximum room temperature conversion efficiencies of 57%, an operating range from -80°C up to +185°C, and threshold currents below 500 μA from -40 to +80°C have been obtained
Keywords :
III-V semiconductors; gallium arsenide; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; quantum well lasers; surface emitting lasers; -80 to 185 C; 500 muA; 57 percent; 850 nm; AlGaAs:C; C p-type doping; GaAs; VCSEL; conversion efficiencies; oxide-confined laser; solid source MBE; surface-emitting lasers; vertical-cavity SEL; wallplug efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970193
