Effect of thermal noise on the bit error rate of SFQ devices

Author

Kang, J.H. ; Przybysz, J.X. ; Worsham, A.H. ; Miller, D.L.

Author_Institution

Northrop Grumman STC, Pittsburgh, PA, USA

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

4345

Lastpage

4348

Abstract

To measure the effect of thermal noise on switching a Josephson junction to the voltage state a simple SFQ circuit constructed with resistively shunted Nb/AlO/sub x//Nb junctions was used. Based on a good agreement between the measured data and the thermal activation theory, the effect of thermal noise on the bit error rate of SFQ devices was studied, The effective thermal noise temperature of 10 K used to fit the data was higher than the bath temperature of 4.2 K. Careful circuit design to get large critical margins is necessary to achieve high operating temperature of SFQ logic devices.

Keywords

aluminium compounds; integrated circuit noise; logic gates; niobium; superconducting logic circuits; superconductor-insulator-superconductor devices; thermal noise; 4.2 K; Josephson junction; Nb-AlO-Nb; SFQ devices; bath temperature; bit error rate; critical margins; operating temperature; resistively shunted junctions; single flux quantum; superconducting logic circuits; thermal activation theory; thermal noise; Bit error rate; Circuit noise; Circuit synthesis; Josephson junctions; Niobium; Noise measurement; Switching circuits; Temperature; Thermal resistance; Voltage;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.783987

Filename

783987