Title :
Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs
Author :
Daumiller, I. ; Kirchner, C. ; Kamp, M. ; Ebeling, K.J. ; Kohn, E.
Author_Institution :
Dept. of Electron. Devices & Circuit, Ulm Univ., Germany
Abstract :
Temperature stress experiments up to 800/spl deg/C have been applied to AlGaN/GaN FET´s grown by MOVPE on sapphire and their individual technological building blocks. It was found that the temperature limit is given by the irreversible degradation of the intrinsic active heterostructure material itself during operation above 600/spl deg/C. The irreversible degradation was observed for both unconnected and electrically operated devices during temperature stress.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; junction gate field effect transistors; wide band gap semiconductors; 600 to 800 C; AlGaN-GaN; AlGaN/GaN heterostructure FET; MOVPE growth; high temperature stress; sapphire substrate; temperature stability; Aluminum gallium nitride; Degradation; Epitaxial growth; FETs; Gallium nitride; Gold; Semiconductor materials; Stability; Stress; Temperature;
Journal_Title :
Electron Device Letters, IEEE
