1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

Author

Nakao, Ryo ; Arai, Masakazu ; Kobayashi, Wataru ; Yamamoto, Tsuyoshi ; Matsuo, Shinji

Author_Institution

NTT Device Technol. Labs., NTT Corp., Atsugi, Japan

Volume

21

Issue

6

fYear

2015

fDate

Nov.-Dec. 2015

Firstpage

1

Lastpage

7

Abstract

We demonstrate a lattice relaxation control by in situ curvature measurement for a metamorphic buffer. Using this relaxation control, we investigated a thin (240 nm) In_0.15Ga_0.85 As metamorphic buffer for fabricating an unstrained In_0.10Ga_0.90As quasi-substrate on a GaAs substrate and succeeded in fabricating a 1.3-μm metamorphic InGaAs multiplequantum well laser diode (LD) on the metamorphic buffer. We confirmed that the LD was directly modulated at 25 Gb/s with a high-characteristic temperature (T₀ = 187 K).

Keywords

III-V semiconductors; curvature measurement; gallium arsenide; indium compounds; optical fabrication; optical modulation; quantum well lasers; GaAs; GaAs substrate; InGaAs; InGaAs MQW metamorphic laser diode; bit rate 25 Gbit/s; direct modulation; high-characteristic temperature; in situ curvature measurement; lattice relaxation control; metamorphic buffer; metamorphic multiplequantum well laser diode; size 240 nm; temperature 187 K; wavelength 1.3 mum; Epitaxial layers; Gallium arsenide; Lattices; Quantum well devices; Strain; Substrates; Temperature; Diode lasers; metamorphic; quantum well lasers; semiconductor growth;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2015.2420595

Filename

7080844