Ultrafast all-optical switching at 1.3 /spl mu/m/1.55 /spl mu/m using novel InGaAs-AlAsSb-InP coupled double quantum well structure for intersubband transitions

Author

Yoshida, H. ; Mozume, T. ; Neogi, A. ; Wada, O.

Author_Institution

FESTA Labs., Femtosecond Technol. Res. Assoc., Ibaraki, Japan

Volume

35

Issue

13

fYear

1999

fDate

6/24/1999 12:00:00 AM

Firstpage

1103

Lastpage

1105

Abstract

A coupled double quantum well (C-DQW) structure enabling ultrafast, multiwavelength, all-optical modulation using intersubband transitions is proposed. It has been demonstrated by calculating the absorption and relaxation characteristics that the InGaAs-AlAsSb C-DQW structure is desirable for application in all-optical switches for multiwavelength operation at near-infrared wavelengths down to 1.3 /spl mu/m. The capability of ultrafast all-optical switching/wavelength conversion between 1.3 and 1.55 /spl mu/m has also been demonstrated.

Keywords

optical communication equipment; 1.3 mum; 1.55 mum; InGaAs-AlAsSb C-DQW structure; InGaAs-AlAsSb-InP; InGaAs-AlAsSb-InP coupled double quantum well structure; absorption characteristics; all-optical switches; intersubband transitions; multiwavelength operation; near-infrared wavelengths; optical wavelength conversion; relaxation characteristics; ultrafast all-optical switching; ultrafast multiwavelength all-optical modulation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19990733

Filename

784555