Modeling boron diffusion in ultrathin nitrided oxide p/sup +/ Si gate technology

Author

Fair, Richard B.

Author_Institution

Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA

Volume

18

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

244

Lastpage

247

Abstract

Based on a network defect model for the diffusion of B in SiO/sub 2/, we propose that B diffuses via a peroxy linkage defect (pld) whose concentration in the oxide changes under different processing conditions. We show that as N is added to the gate oxide (nitridation), N atoms compete with B atoms for activation through the diffusion-defect sites. The model predicts that nitridation is ineffective in stopping B penetration when BF/sub 2/ implants dope the polysilicon gate, as well as for the case of very thin gate dielectrics with B-implanted gates.

Keywords

MOSFET; boron; dielectric thin films; diffusion; ion implantation; nitridation; semiconductor process modelling; B diffusion modeling; B penetration; BF/sub 2/ implantation doping; MOSFET; Si:BF/sub 2/; SiO/sub 2/:B; SiON:B-Si; diffusion-defect sites; network defect model; nitridation; peroxy linkage defect; polysilicon gate; processing conditions; ultrathin nitrided oxide p/sup +/ Si gate technology; very thin gate dielectrics; Boron; Couplings; Dielectric thin films; Doping; Implants; Intelligent networks; Nitrogen; Predictive models; Semiconductor process modeling; Spatial resolution;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.585342

Filename

585342