DocumentCode :
1547096
Title :
A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET´s by charge pumping measurement
Author :
Ang, D.S. ; Ling, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Volume :
18
Issue :
6
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
299
Lastpage :
301
Abstract :
By progressively lowering the gate-base level in the charge pumping (CP) measurement, the channel accumulation layer is caused to advance into the LDD gate-drain overlap and spacer-oxide regions, extending the interface that can be probed. This constitutes the basis of a new technique that separates the hot-carrier-induced interface states in the respective regions. Linear drain current degradation, measured at low and high gate bias, provides clear evidence that interface state generation initiates in the spacer region and progresses rapidly into the overlap/channel regions with stress time in a two-stage mechanism, involving first a series resistance increase and saturation, followed by a carrier mobility reduction.
Keywords :
MOSFET; accumulation layers; carrier mobility; hot carriers; interface states; LDD NMOSFET; Si-SiO/sub 2/; carrier mobility reduction; channel accumulation layer; charge pumping measurement; gate-base level lowering; gate-drain overlap region; hot-carrier-induced interface states; linear drain current degradation; self-limiting hot-carrier degradation; series resistance saturation; spacer-oxide region; stress induced defects; two-stage mechanism; Charge measurement; Charge pumps; Current measurement; Degradation; Hot carriers; Interface states; MOSFET circuits; Pulse measurements; Stress; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.585365
Filename :
585365
Link To Document :
بازگشت