Title :
A p-Ge/sub 1-x/C/sub x//n-Si heterojunction diode grown by molecular beam epitaxy
Author :
Xiaoping Shao ; Rommel, S.L. ; Orner, B.A. ; Kolodzey, J. ; Berger, P.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA
Abstract :
We report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge/sub 0.998/C/sub 0.002/ on an n-type Si substrate. Epitaxial Ge/sub 0.998/C/sub 0.002/ was grown on a (100) Si substrate by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification. The I-V characteristics of the p-GeC/n-Si diode indicate a reasonable reverse saturation current of 89 pA/μm2 at -1 V and a high reverse breakdown voltage in excess of -40 V. Photoresponse from the Ge/sub 0.998/C/sub 0.002/ p-n diode was observed from 1.3-μm laser excitation resulting in an external quantum efficiency of 1.4%.
Keywords :
electric breakdown; elemental semiconductors; germanium compounds; molecular beam epitaxial growth; p-n heterojunctions; photodiodes; semiconductor diodes; semiconductor growth; semiconductor materials; silicon; solid-state rectifiers; (100) Si substrate; -40 V; 1.3 micron; 1.4 percent; GeC-Si; I-V characteristics; Si; characterization; diode rectification; epitaxial p-type Ge/sub 0.998/C/sub 0.002/; external quantum efficiency; fabrication; high reverse breakdown voltage; molecular beam epitaxy; n-type Si substrate; p-Ge/sub 1-x/C/sub x//n-Si heterojunction diode; p-n diode; photoresponse; reverse saturation current; solid source MBE; Capacitive sensors; Fabrication; Germanium alloys; Germanium silicon alloys; Heterojunctions; Lattices; Molecular beam epitaxial growth; Semiconductor diodes; Silicon germanium; Substrates;
Journal_Title :
Electron Device Letters, IEEE
