DocumentCode :
1547893
Title :
Hydrogen Peroxide Removal From Chemical–Mechanical Planarization Wastewater
Author :
Dakubo, Francis ; Baygents, James C. ; Farrell, Jay A.
Author_Institution :
Freeport-McMoRan Copper and Gold, Morenci, AZ, USA
Volume :
25
Issue :
4
fYear :
2012
Firstpage :
623
Lastpage :
629
Abstract :
The goal of this paper was to identify and investigate a practical method for removing hydrogen peroxide from wastewater generated during chemical and mechanical planarization of integrated circuits. Rates of hydrogen peroxide destruction were investigated using: 1) ultraviolet (UV) light; 2) electrochemical reduction and oxidation; 3) two activated carbon catalysts; and 4) a pyrolusite catalyst. The effects of ethylenediaminetetraaceticacid (EDTA), ethylenediamine (ED), and dissolved copper ions on rates of {\\rm H}_{2}{\\rm O}_{2} destruction were also investigated. Hydrogen peroxide destruction rates using UV light and the electrochemical reactor were too slow to be useful in a practical treatment scheme. Both activated carbon and pyrolusite catalysts produced fast rates of {\\rm H}_{2}{\\rm O}_{2} destruction. However, the presence of EDTA and ED decreased reaction rates on activated carbon, whereas rates on pyrolusite were unaffected. Column experiments with the pyrolusite yielded greater than 99.9% {\\rm H}_{2}{\\rm O}_{2} destruction using empty bed contact times as short as 1 min.
Keywords :
Hydrogen peroxide; Integrated circuit manufacture; Planarization; Wastewater treatment; Chemical mechanical planarization (CMP); hydrogen peroxide; pyrolusite; wastewater treatment;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2012.2205283
Filename :
6225445
Link To Document :
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