Title :
Highly efficient diode-pumped 3-/spl mu/m Er/sup 3+/:BaY/sub 2/F/sub 8/ laser
Author :
Eichler, Hans J. ; Findeisen, Julian ; Liu, Baining ; Kaminskii, A.A. ; Butachin, A.V. ; Peuser, Peter
Author_Institution :
Opt. Inst., Tech. Univ. Berlin, Germany
Abstract :
A systematic investigation on a series of monoclinic Er3+:BaY2F8 crystals with different dopant concentrations (CEr = 5%–30%) and crystal orientations was conducted to optimize the laser performance in this new 3-μm laser medium by laser diode pumping. The highest slope efficiency of 32% near the quantum defect (35%) was obtained with a 10% doped Er3+:BaY2F8 crystal with the orientation (010) and a length of 3.5 mm. A maximum output power of 160 mW was achieved at an absorbed pump power of 550 mW at a wavelength of 970 nm.
Keywords :
barium compounds; crystal orientation; erbium; laser transitions; solid lasers; 160 mW; 3 mum; 3.5 mm; 35 percent; 550 mW; 970 nm; BaY/sub 2/F/sub 8/:Er; Er/sup 3+/:BaY/sub 2/F/sub 8/ crystal; absorbed pump power; crystal orientations; dopant concentrations; highest slope efficiency; highly efficient diode-pumped 3-/spl mu/m Er/sup 3+/:BaY/sub 2/F/sub 8/ laser; laser diode pumping; laser medium; laser performance optimisation; laser transitions; maximum output power; monoclinic Er/sup 3+/:BaY/sub 2/F/sub 8/ crystals; quantum defect; Crystallization; Crystals; Diode lasers; Erbium; Indium gallium arsenide; Laser applications; Laser excitation; Laser modes; Pump lasers; Solid lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.585819
