• DocumentCode
    1549385
  • Title

    1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition

  • Author

    Shernyakov, Yu.M. ; Bedarev, D.A. ; Eva, E. Yu Kondrat ; Kop, P.S. ; Kovsh, A.R. ; Maleev, N.A. ; Maximov, M.V. ; Mikhrin, S.S. ; Nikov, A. F Tsatsul ; Ustinov, V.M. ; Volovik, B.V. ; Zhukov, A.E. ; Alferov, Zh.I. ; Ledentsov, N.N. ; Bimberg, D.

  • Author_Institution
    A.F. Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
  • Volume
    35
  • Issue
    11
  • fYear
    1999
  • fDate
    5/27/1999 12:00:00 AM
  • Firstpage
    898
  • Lastpage
    900
  • Abstract
    Low threshold current density (Jth=65 A/cm2) operation near 1.3 μm at room temperature (RT) is realised for lasers using InAs-InGaAs-GaAs quantum dots (QDs). The lasing occurs via the QD ground state for cavity length L>1 mm. The differential efficiency is 40% and internal losses are 1.5 cm. The characteristic temperature near RT is 160 K.
  • Keywords
    indium compounds; 1.3 mum; 160 K; GaAs-based laser; InAs-InGaAs-GaAs; InAs-InGaAs-GaAs quantum dot laser; QD ground state; activated spinodal decomposition; cavity length; characteristic temperature; differential efficiency; internal losses; low threshold current density; quantum dot laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990596
  • Filename
    785380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1549385