DocumentCode :
1549385
Title :
1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Author :
Shernyakov, Yu.M. ; Bedarev, D.A. ; Eva, E. Yu Kondrat ; Kop, P.S. ; Kovsh, A.R. ; Maleev, N.A. ; Maximov, M.V. ; Mikhrin, S.S. ; Nikov, A. F Tsatsul ; Ustinov, V.M. ; Volovik, B.V. ; Zhukov, A.E. ; Alferov, Zh.I. ; Ledentsov, N.N. ; Bimberg, D.
Author_Institution :
A.F. Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
Volume :
35
Issue :
11
fYear :
1999
fDate :
5/27/1999 12:00:00 AM
Firstpage :
898
Lastpage :
900
Abstract :
Low threshold current density (Jth=65 A/cm2) operation near 1.3 μm at room temperature (RT) is realised for lasers using InAs-InGaAs-GaAs quantum dots (QDs). The lasing occurs via the QD ground state for cavity length L>1 mm. The differential efficiency is 40% and internal losses are 1.5 cm. The characteristic temperature near RT is 160 K.
Keywords :
indium compounds; 1.3 mum; 160 K; GaAs-based laser; InAs-InGaAs-GaAs; InAs-InGaAs-GaAs quantum dot laser; QD ground state; activated spinodal decomposition; cavity length; characteristic temperature; differential efficiency; internal losses; low threshold current density; quantum dot laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990596
Filename :
785380
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1549385
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