Title :
Room-temperature pulsed operation of GaAsSb-GaAs vertical-cavity surface-emitting lasers
Author :
Anan, T. ; Yamada, M. ; Tokutome, K. ; Sugou, S. ; Nishi, K. ; Kamei, A.
Author_Institution :
Opt. Interconnection NEC Lab., Ibaraki, Japan
fDate :
5/27/1999 12:00:00 AM
Abstract :
GaAs-based long-wavelength vertical-cavity surface-emitting lasers with a GaAsSb quantum well active layer have been fabricated for the first time. Room temperature pulsed oscillation was obtained at a wavelength of 1.22 μm with a threshold current of 20 mA for devices with 25 μm square mesa.
Keywords :
gallium arsenide; 1.22 mum; 20 mA; GaAs-based long-wavelength vertical-cavity surface-emitting lasers; GaAsSb; GaAsSb quantum well active layer; GaAsSb-GaAs; GaAsSb-GaAs vertical-cavity surface-emitting lasers; quantum well lasers; room-temperature pulsed operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990633
