DocumentCode
15497
Title
Solid State Magnetic Field Sensor With Zero Power Consumption
Author
Bakhoum, Ezzat G.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of West Florida, Pensacola, FL, USA
Volume
4
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
86
Lastpage
93
Abstract
This paper introduces a new type of solid-state magnetic field sensor that is similar in size to a Hall effect sensor and that offers a sensitivity that is approximately an order of magnitude better than a Hall effect sensor. The significant advantage of the new sensor, however, is that it consumes no power. The sensor consists of a radioactive β-particle source and a silicon p-n junction. If no magnetic field is applied, the β particles enter the p-n junction and generate a steady dc voltage. Under the influence of a magnetic field, however, the β particles (or secondary electrons generated therefrom) follow a curved path and miss the p-n junction, and the magnitude of the output voltage drops. The new sensor will be very advantageous in battery-powered consumer products applications because it consumes no power.
Keywords
consumer products; electric potential; electric sensing devices; elemental semiconductors; magnetic field measurement; magnetic sensors; p-n junctions; power consumption; silicon; Hall effect sensor; Si; battery-powered consumer product application; curved path junction; output voltage drop; radioactive β-particle source; secondary electron; silicon p-n junction; solid state magnetic field sensor; steady DC voltage; zero power consumption; Equations; Hall effect; Kinetic energy; Magnetic noise; Magnetic tunneling; P-n junctions; Silicon; Beta-particle detectors; beta-particle sources; betavoltaics; hall-effect sensor; magnetic field sensor;
fLanguage
English
Journal_Title
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
2156-3950
Type
jour
DOI
10.1109/TCPMT.2013.2279796
Filename
6603348
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