Improvement of Sb-based multiquantum well lasers by Coulomb enhancement

Author

Christol, P. ; Bigenwald, P. ; Joullié, A. ; Cuminal, Y. ; Baranov, A.N. ; Bertru, N. ; Rouillard, Y.

Author_Institution

Lab. de Phys. des Mater., Faculte des Sci. d´´Avignon, France

Volume

146

Issue

1

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

3

Lastpage

8

Abstract

Strained GaInAsSb-GaSb quantum wells, grown by molecular beam epitaxy on GaSb substrates, have exhibited laser emissions at 2.35 μm and 2.65 μm al 23°C with respective threshold densities of 0.6 k A/cm² and 3 kA/cm². Taking into account the Coulomb attraction, induced by carrier injection, we explain why room temperature lasing is possible in these structures, which have a type-II band alignment. A comparison between experimental and simulated data including Coulomb enhancement shows the essential part played by the electrostatic confinement in these quantum well laser structures

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 2.35 mum; 2.65 mum; 23 C; Coulomb attraction; Coulomb enhancement; GaInAsSb-GaSb; GaSb; GaSb substrates; MBE; Sb-based multiquantum well lasers; carrier injection; electrostatic confinement; laser emissions; laser transitions; molecular beam epitaxial growth; quantum well laser structures; room temperature lasing; strained GaInAsSb-GaSb quantum wells; threshold densities; type-II band alignment;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19990456

Filename

787766