• DocumentCode
    155017
  • Title

    Selective amplifier microwave-based non-inverting repeater AC current element basis of radiation resistant SiGe process technology

  • Author

    Prokopenko, Nikolay N. ; Serebryakov, Alexander I. ; Butyrlagin, N.V.

  • Author_Institution
    Don State Tech. Univ., Rostov-on-Don, Russia
  • Volume
    2
  • fYear
    2014
  • fDate
    25-26 Sept. 2014
  • Firstpage
    108
  • Lastpage
    115
  • Abstract
    Considered circuitry of selective amplifiers (SA) of the microwave range, the basis for constructing non-inverting repeaters alternating current. Proposed scheme of SA implemented in element basis of radiation-resistant SiGe process technology and don´t contain any of the PNP transistors. Given calculation expressions of basic parameters. Shown the results of computer simulation of the SA in the gigahertz frequency range.
  • Keywords
    Ge-Si alloys; microwave amplifiers; microwave transistors; repeaters; AC current element; PNP transistors; computer simulation; noninverting repeaters alternating current; radiation resistant process technology; selective amplifier microwave-based noninverting repeater; Electronic mail; Microwave amplifiers; Microwave circuits; Microwave transistors; Repeaters; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electron Devices Engineering (APEDE), 2014 International Conference on
  • Conference_Location
    Saratov
  • Print_ISBN
    978-1-4799-3437-9
  • Type

    conf

  • DOI
    10.1109/APEDE.2014.6958225
  • Filename
    6958225