Title :
λ=8.3 μm GaAs/AlAs quantum cascade lasers incorporating InAs monolayers
Author :
Wilson, L.R. ; Cockburn, J.W. ; Carder, D.A. ; Steer, M.J. ; Hopkinson, M. ; Chia, C.K. ; Airey, R. ; Hill, G.
Author_Institution :
Dept. of Phys. & Astron., Sheffield Univ., UK
fDate :
10/11/2001 12:00:00 AM
Abstract :
The development of GaAs-based quantum cascade lasers incorporating indirect bandgap AlAs barriers in conjunction with ultrathin InAs layers in the active regions of the device is reported. The InAs layers produce a downshift of the energies of the lower lasing states, allowing laser emission to be observed at λ=8.34 μm. The GaAs/InAs/AlAs devices operate in pulsed mode up to a maximum temperature of 250 K, with a characteristic temperature of around 200 K for T>100 K
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser beams; laser modes; monolayers; quantum well lasers; ridge waveguides; waveguide lasers; 100 K; 200 K; 250 K; 8.34 mum; GaAs-AlAs; GaAs-InAs-AlAs; GaAs-based quantum cascade lasers; GaAs/AlAs quantum cascade lasers; GaAs/InAs/AlAs devices; InAs; InAs monolayers; active regions; characteristic temperature; downshift; energies; indirect bandgap AlAs barriers; laser emission; lower lasing states; maximum temperature; pulsed mode; quantum cascade lasers; ultrathin InAs layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010865
