DocumentCode :
1551402
Title :
Polarization Effect on the Photovoltaic Characteristics of 
Superlattice Solar C
Author :
Kuo, Yen-Kuang ; Lin, Han-Wei ; Chang, Jih-Yuan ; Chen, Yu-Han ; Chang, Yi-An
Author_Institution :
Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan
Volume :
33
Issue :
8
fYear :
2012
Firstpage :
1159
Lastpage :
1161
Abstract :
The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al0.14Ga0.86N/In0.21Ga0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al0.14Ga0.86N/In0.21Ga0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor superlattices; solar cells; wide band gap semiconductors; Al0.14Ga0.86N-In0.21Ga0.79N; crystal quality; internal polarization; p-i-n structure; photovoltaic characteristics; polarization effect; spontaneous piezoelectric polarizations; strain-induced piezoelectric polarizations; superlattice solar cells; Absorption; Gallium nitride; PIN photodiodes; Photovoltaic cells; Photovoltaic systems; Piezoelectric polarization; InGaN; polarization; solar cell; superlattice (SL);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2200229
Filename :
6230603
Link To Document :
