DocumentCode
1551926
Title
40 Gbit/s/GHz clock recovery and frequency multiplying AlGaAs/GaAs-HEMT-IC using injection-synchronised narrowband ring-VCOs and auxiliary PLLs
Author
Wang, Zhi-Gong ; Thiede, A. ; Schlechtweg, M. ; Lienhart, H. ; Hulsmann, A. ; Raynor, B. ; Schneider, J. ; Jakobus, T.
Author_Institution
Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany
Volume
35
Issue
14
fYear
1999
fDate
7/8/1999 12:00:00 AM
Firstpage
1151
Lastpage
1152
Abstract
An IC technique for clock recovery and frequency multiplication was developed by combining a preprocessor, an injection-synchronised narrowband ring voltage controlled oscillator, and a phaselocked loop. A 40 Gbit/s/GHz IC was realised using 0.2 μm GaAs HEMTs. A multiplying factor as high as 64 was reached. The DC consumption is 900 mW
Keywords
HEMT integrated circuits; III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; phase locked loops; synchronisation; voltage-controlled oscillators; 0.2 micron; 40 Gbit/s; 900 mW; AlGaAs-GaAs; AlGaAs/GaAs HEMT IC; clock recovery; frequency multiplication; injection synchronised narrowband ring voltage controlled oscillator; phase locked loop; preprocessor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990802
Filename
788935
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