• DocumentCode
    1552946
  • Title

    Electrically-pumped, single-epitaxial VCSELs at 1.55 μm with Sb-based mirrors

  • Author

    Hall, E. ; Almuneau, G. ; Kim, J.K. ; Sjölund, O. ; Kroemer, H. ; Coldren, L.A.

  • Author_Institution
    Dept. of Mater., California Univ., Santa Barbara, CA, USA
  • Volume
    35
  • Issue
    16
  • fYear
    1999
  • fDate
    8/5/1999 12:00:00 AM
  • Firstpage
    1337
  • Lastpage
    1338
  • Abstract
    Electrically-pumped, Sb-based vertical-cavity lasers operating at 1.55 μm and produced in a single epitaxial growth have been demonstrated. These lasers, which employ AlGaAsSb mirrors and an AlInGaAs-based active region, have room temperature threshold current densities of 1.4 kA/cm2 and an external quantum efficiency of ~18%
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser mirrors; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; 1.55 micrometre; 18 percent; AlGaAsSb-AlAsSb-AlInGaAs; active region; external quantum efficiency; mirrors; room temperature threshold current densities; single-epitaxial VCSELs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990965
  • Filename
    790037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1552946