Title :
Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Phosphorus-Doped Source/Drain Regions
Author :
Chen, Rongsheng ; Zhou, Wei ; Zhang, Meng ; Wong, Man ; Kwok, Hoi-Sing
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with phosphorusdoped source/drain regions are developed in this letter. The resulting a-IGZO TFT exhibits high thermal stability and good electrical performance, including field-effect mobility of 5 cm2/V · s, a threshold voltage of 5.6 V, a subthreshold swing of 0.5 V/dec, and an on/off current ratio of 6 × 107. With scaling down of the channel length, good characteristics are also obtained with a small shift in the threshold voltage and no degradation in the subthreshold swing.
Keywords :
gallium; indium; thermal stability; thin film transistors; zinc compounds; In-Ga-ZnO; channel length; electrical performance; field-effect mobility; on-off current ratio; phosphorus-doped source-drain regions; self-aligned top-gate amorphous TFT; subthreshold swing; thermal stability; thin-film transistor; threshold voltage; voltage 5.6 V; Hydrogen; Logic gates; Plasmas; Thermal stability; Thin film transistors; Threshold voltage; Amorphous indium–gallium–zinc oxide (a-IGZO); phosphorus-doped; self-aligned; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2201444