DocumentCode :
1552970
Title :
Reliability Improvement of 28-nm High- 
/Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing
Author :
Yang, Yi-Lin ; Zhang, Wenqi ; Cheng, Chi-Yun ; Huang, Yi-Ping ; Chen, Pin-Tseng ; Hsu, Chia-Wei ; Chin, Li-Kong ; Lin, Chien-Ting ; Hsu, Che-Hua ; Lai, Chien-Ming ; Yeh, Wen-Kuan
Author_Institution :
Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan
Volume :
33
Issue :
8
fYear :
2012
Firstpage :
1183
Lastpage :
1185
Abstract :
In this letter, performance and reliability of high-k/metal gate MOSFETs can be effectively improved using post metallization annealing. Both oxygen and nitrogen were shown to diffuse into a high-k/SiO2 interfacial layer to suppress the formation of oxygen vacancy, thus reducing the gate leakage current without increasing effective oxide thickness. In particular, with appropriate oxygen annealing, gate-induced drain leakage, drain-current degradation, and gate leakage current variation of high- k/metal gate-last MOSFETs can be efficiently suppressed.
Keywords :
MOSFET; annealing; diffusion; leakage currents; semiconductor device metallisation; semiconductor device reliability; silicon compounds; vacancies (crystal); SiO2; drain-current degradation; gate leakage current; gate-induced drain leakage; high-k-metal gate-last MOSFET; high-k-silicon dioxide interfacial layer; nitrogen; oxide thickness; oxygen annealing; oxygen vacancy; postmetallization annealing; reliability improvement; size 28 nm; Annealing; Degradation; High K dielectric materials; Leakage current; Logic gates; Metals; Stress; Annealing; oxygen; reliability; semiconductor devices;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2202089
Filename :
6231646
Link To Document :
