DocumentCode
1553075
Title
Trap effects studies in GaN MESFETs by pulsed measurements
Author
Trassaert, S. ; Boudart, B. ; Gaquiére, C. ; Théron, D. ; Crosnier, Y. ; Huet, F. ; Poisson, M.A.
Author_Institution
USTL, IEMN, Villeneuve d´´Ascq, France
Volume
35
Issue
16
fYear
1999
fDate
8/5/1999 12:00:00 AM
Firstpage
1386
Lastpage
1388
Abstract
Static and pulsed measurements have been performed on GaN MESFETs. The existence of electrical traps associated with the surface states has been demonstrated. These traps can be activated by light or temperature. Hyper-frequency pulsed measurements performed at 3 GHz have shown that the maximum stable gain increases with temperature
Keywords
III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; electron traps; gallium compounds; high-temperature electronics; power MESFET; semiconductor device measurement; surface states; wide band gap semiconductors; 3 GHz; GaN; GaN MESFETs; electrical traps; maximum stable gain; pulsed measurements; surface states; trap effects studies;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990887
Filename
790070
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