DocumentCode
1553387
Title
New model extraction for predicting distortion in HEMT and MESFET circuits
Author
Qu, Guoli ; Parker, Anthony E.
Author_Institution
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
9
Issue
9
fYear
1999
fDate
9/1/1999 12:00:00 AM
Firstpage
363
Lastpage
365
Abstract
A new method is presented for extracting Taylor series coefficients directly from IM measurements for modeling IM distortion in HEMT and MESFET circuits. It is based on an improved model that uses better simplifying assumptions. The method gives a substantially more accurate characterization, especially in the saturation region, required for amplifier designs
Keywords
HEMT circuits; MESFET circuits; intermodulation distortion; microwave amplifiers; microwave circuits; HEMT circuits; IM distortion; IM measurements; MESFET circuits; Taylor series coefficients; amplifier designs; distortion; model extraction; saturation region; Data mining; Differential equations; Distortion measurement; HEMTs; Intermodulation distortion; MESFET circuits; Nonlinear distortion; Predictive models; Switches; Taylor series;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.790475
Filename
790475
Link To Document