Title :
Efficient single-mode oxide-confined GaAs VCSEL´s emitting in the 850-nm wavelength regime
Author :
Grabherr, M. ; Jager, R. ; Michalzik, R. ; Weigl, B. ; Reiner, G. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
Single- and multimode vertical-cavity surface-emitting lasers (VCSELs) with three unstrained GaAs quantum wells (QWs) and emission wavelengths around 850 nm have been fabricated using molecular beam epitaxy (MBE) for crystal growth. Wet chemical etching and subsequent selective oxidation are applied for current confinement. The influence of oxide layer position on lateral index guiding is studied in detail in order to increase maximum single-mode output power. A device of 3-μm active diameter and reduced index guiding shows maximum single-mode output power of 2.25 mW with a side-mode suppression ratio (SMSR) of more than 30 dB for high-efficiency oxidized VCSELs.
Keywords :
III-V semiconductors; etching; gallium arsenide; laser cavity resonators; laser modes; laser transitions; molecular beam epitaxial growth; optical fabrication; oxidation; quantum well lasers; semiconductor growth; surface emitting lasers; 2.25 mW; 3 mum; 850 nm; GaAs; active diameter; crystal growth; current confinement; efficient single-mode oxide-confined GaAs VCSEL; emission wavelengths; high-efficiency oxidized VCSEL; lateral index guiding; maximum single-mode output power; molecular beam epitaxy; multimode vertical-cavity surface-emitting laser; oxide layer position; reduced index guiding; selective oxidation; side-mode suppression ratio; single-mode vertical-cavity surface-emitting laser; three unstrained GaAs quantum wells; wet chemical etching; Chemical lasers; Gallium arsenide; Molecular beam epitaxial growth; Oxidation; Power generation; Quantum well lasers; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
