Title :
Extraction of semiconductor intrinsic laser parameters by intermodulation distortion analysis
Author :
Salgado, H.M. ; Ferreira, J.M. ; O´Reilly, J.J.
Author_Institution :
Centro de Optoelectron., INESC, Porto, Portugal
Abstract :
A new technique is described for the extraction of the intrinsic semiconductor parameters from intermodulation measurement of composite second-order (CSO) and composite third-order (CTB) distortion products. The effect of the parasitics elements are eliminated, by taking the distortion measurements at constant optical modulation depth, which enables one to obtain the laser parameters on packaged laser diodes. An optimization algorithm is then described that extracts the relevant laser parameters from the distortion data. This method was applied to a commercially available packaged laser diode and very good agreement was obtained between the measured and theoretical results.
Keywords :
Volterra series; intermodulation distortion; optical noise; optimisation; parameter estimation; semiconductor lasers; 0.01 to 6 GHz; 1.3 mum; Volterra method; composite second-order distortion products; composite third-order distortion products; constant optical modulation depth; intermodulation distortion analysis; optimization algorithm; packaged laser diodes; semiconductor intrinsic laser parameter extraction; Data mining; Diode lasers; Distortion measurement; Intermodulation distortion; Laser noise; Laser theory; Optical distortion; Optical modulation; Semiconductor device packaging; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
