High voltage 4H-SiC Schottky barrier diodes

Author

Raghunathan, R. ; Alok, D. ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

16

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

226

Lastpage

227

Abstract

Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages up to 1000 V are reported for the first time. The diodes showed excellent forward I-V characteristics, with a forward voltage drop of 1.06 V at an on-state current density of 100 A/cm/sup 2/. The specific on-resistance for these diodes was found to be low (2/spl times/10/sup -3/ /spl Omega/-cm/sup 2/ at room temperature) and showed a T/sup 1.6/ variation with temperature. Titanium Schottky barrier height was determined to be 0.99 eV independent of the temperature. The breakdown voltage of the diodes was found to decrease with temperature.

Keywords

silicon compounds; 1000 V; 300 to 473 K; 4H-SiC Schottky barrier diodes; Ti Schottky barrier height; Ti-SiC; breakdown voltage; forward I-V characteristics; forward voltage drop; high voltage diodes; on-state current density; specific on-resistance; temperature variation; Artificial intelligence; Breakdown voltage; Current density; Electron mobility; Low voltage; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.790716

Filename

790716