DocumentCode :
1554361
Title :
High temperature characteristics of GaAs MESFET devices fabricated with AlAs buffer layer
Author :
Lee, R. ; Trombley, G. ; Johnson, B. ; Reston, R. ; Misoon Mah ; Havasy, C. ; Ito, C.
Author_Institution :
Res. Div., Solid State Electron. Directorate, US Air Force Wright Lab., Dayton, OH, USA
Volume :
16
Issue :
6
fYear :
1995
fDate :
6/1/1995 12:00:00 AM
Firstpage :
265
Lastpage :
267
Abstract :
We have investigated the influence of AlAs buffer layers on MESFET drain leakage current at temperatures from 25-350/spl deg/C. The experimental results show that subthreshold drain leakage current is substantially decreased with increasing AlAs layer thickness. For a 1 μm×200 μm MESFET with 2500 /spl Aring/ of AlAs buffer layer, we have obtained 78 μA of subthreshold drain leakage current at 350/spl deg/C ambient temperature. This leakage current value is a factor of 2.5 improvement over the best previously reported results at 350/spl deg/C.
Keywords :
Schottky gate field effect transistors; 1 micron; 25 to 350 degC; 2500 angstrom; 78 muA; GaAs-AlAs; MESFET devices; ambient temperature; buffer layer; high temperature characteristics; subthreshold drain leakage current; Aerospace electronics; Buffer layers; Conductivity; Gallium arsenide; Leakage current; MESFETs; Semiconductor materials; Space technology; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.790730
Filename :
790730
Link To Document :
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