Title :
Low frequency noise in 6H-SiC MOSFET´s
Author :
Casady, J.B. ; Dillard, W. ; Johnson, R.W. ; Agarwal, A.K. ; Siergiej, R.R. ; Wagner, W.E., III
Author_Institution :
Center for Commercial Dev., Auburn Univ., AL, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
The noise spectra for n-channel, depletion-mode MOSFETs fabricated in 6H-SiC material were measured from 1-105 Hz at room temperature. Devices were biased in the linear regime, where the noise spectra was found to be dependent upon the drain-to-source bias current density. At a drain-to-source current of 50 μA for MOSFETs with a W/L of 400 μm/4 μm, the measured drain-to-source noise power spectral density was found to be A/(f/sup /spl lambda//), with A being 2.6×10/sup -12/ V2, and /spl lambda/ being between 0.73 and 0.85, indicating a nonuniform spatial trap density skewed towards the oxide-semiconductor interface. The measured Hooge parameter (/spl alpha//sub H/) was 2×10/sup -5/. This letter represents the first reported noise characterization of 6H-SiC MOSFET´s.
Keywords :
semiconductor device noise; 1 to 1E5 Hz; 50 muA; Hooge parameter; SiC; depletion-mode MOSFET; drain-to-source bias current density; linear regime; low frequency noise; noise characterization; noise spectra; nonuniform spatial trap density; oxide-semiconductor interface; Current measurement; Density measurement; Fabrication; Low-frequency noise; MOSFET circuits; Noise measurement; Semiconductor device noise; Silicon carbide; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
