Title :
Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET´s
Author :
de la Houssaye, P.R. ; Chang, C.E. ; Offord, B. ; Imthurn, G. ; Johnson, R. ; Asbeck, P.M. ; Garcia, G.A. ; Lagnado, I.
Author_Institution :
Res. Dev. Test & Evaluation Div., Naval Command Control & Ocean Surveillance Center, San Diego, CA, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Microwave characteristics of n and p-MOS transistors fabricated in thin film (50 and 100 nm) silicon-on-sapphire with T-gate lengths drawn at 0.5 and 0.7 μm are reported. The observed fmax was as high as 32 GHz for a n-MOS 0.7 μm gate length device. Minimum noise figure values of 1.4, 1.8, and 2.1 dB at 2, 8, and 12 GHz respectively were obtained in a 100 nm thick n-channel device. N-channel device results were comparable in the 50 and 100 nm films. For the p-channel FETs, the thinner, more highly stressed films gave significantly better results than the thicker p-channel films. At 2 GHz, p-FET noise figures as low as 1.7 dB were found. These results are, to the authors´ knowledge, the lowest reported noise figures for either the p- or n-channel devices of any silicon based FET technology. Thinner films showed better voltage gain (g/sub m//g/sub out/) than the thicker films.
Keywords :
field effect MMIC; 0.5 micron; 0.7 micron; 1.4 to 2.1 dB; 100 nm; 2 to 18 GHz; 32 GHz; 50 nm; highly stressed films; microwave characteristics; n-channel device; noise figure values; optically fabricated T-gate; p-FET noise figures; thin film silicon-on-sapphire based MOSFET; voltage gain; FETs; MOSFET circuits; Noise figure; Optical films; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Thermal conductivity; Thermal stresses; Voltage;
Journal_Title :
Electron Device Letters, IEEE
