Title :
Indium tin oxide transparent electrodes for broad-area top-emitting vertical-cavity lasers fabricated using a single lithography step
Author :
Chua, C.L. ; Thornton, R.L. ; Treat, D.W. ; Yang, V.K. ; Dunnrowicz, C.C.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
We report for the first time top-emitting buried oxide vertical cavity lasers using transparent indium tin oxide electrodes. Our process enables broad-area InAlGaAs VCSELs to be fabricated in a single lithography step, thus allowing the fast turn-around time necessary for evaluating VCSEL epitaxial materials. The ITO contacts attain a peak transmission of 96%, a specific contact resistance of 10/sup -5/ /spl Omega//spl middot/cm/sup 2/, and a sheet resistivity of 2.5/spl times/10/sup -4/ /spl Omega//spl middot/cm. Under room temperature CW pumping, the devices exhibit a minimum threshold current density of 1.2 kA/cm/sup 2/ at a wavelength of 801 mm, and have a maximum light output power of 5.2 mW.
Keywords :
III-V semiconductors; aluminium compounds; current density; electrodes; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; optical fabrication; optical pumping; photolithography; quantum well lasers; surface emitting lasers; 5.2 mW; 801 nm; ITO; ITO contacts; InAlGaAs; InAlGaAs VCSEL; InSnO; VCSEL epitaxial materials; broad-area top-emitting vertical-cavity lasers; fast turn-around time; indium tin oxide transparent electrodes; laser fabrication; lithography step; maximum light output power; minimum threshold current density; peak transmission; room temperature CW pumping; sheet resistivity; single lithography step; specific contact resistance; top-emitting buried oxide vertical cavity lasers; transparent indium tin oxide electrodes; Conductivity; Contact resistance; Electrodes; Indium tin oxide; Lithography; Optical materials; Sheet materials; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
