Title :
Simultaneous achievement of low insertion loss, high contrast and low operating voltage in asymmetric Fabry-Perot reflection modulator
Author :
Law, K.K. ; Whitehead, Mark ; Merz, J.L. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A normally-on high-performance asymmetric Fabry-Perot modulator using the quantum confined Stark effect in GaAs quantum wells confined by short period AlAs-GaAs superlattices is reported. The modulator is the first of this type to exhibit simultaneously low insertion loss (<1.65 dB), large reflectivity change (>68%) and practically infinite contrast at the Fabry-Perot resonance for an operating voltage swing of under 4 V.
Keywords :
Stark effect; electro-optical devices; integrated optoelectronics; optical interconnections; optical modulation; semiconductor quantum wells; semiconductor superlattices; 4 V; GaAs quantum wells; asymmetric Fabry-Perot reflection modulator; high contrast; high-performance; low insertion loss; low operating voltage; normally-on; quantum confined Stark effect; short period AlAs-GaAs superlattices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911157
