Title :
Generalised partitioned-charge-based bipolar transistor modelling methodology
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC
fDate :
10/13/1988 12:00:00 AM
Abstract :
A generalised formulation of the partitioned-charge-based (PCB) non-quasi-static (NQS) bipolar junction transistor (BJT) model is developed. The methodology, derived by taking moments of the hole (electron) continuity equation, allows the use of arbitrary weighting functions to partition the excess charge in the quasi-neutral base (QNB) to obtain an optimal NQS BJT model within the PCB equivalent network representation
Keywords :
bipolar transistors; semiconductor device models; arbitrary weighting functions; bipolar junction transistor; continuity equation; excess charge; moments; network representation; nonquasistatic; partitioned-charge-based bipolar transistor modelling; quasi-neutral base;
Journal_Title :
Electronics Letters
