Title :
Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET
Author :
Liu, Wen-Chau ; Yu, Kuo-Hui ; Liu, Rong-Chau ; Lin, Kun-Wei ; Lin, Kuan-Po ; Yen, Chih-Hung ; Cheng, Chin-Chuan ; Thei, Kong-Beng
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Thinan, Taiwan
Abstract :
The temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n+-InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1 x 100 μm2 device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, off-state drain-source breakdown voltage of 24.4 (18.7) V, transconductance of 161 (138) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (230) are obtained at 300 (450) K, respectively. The shift of Vth from 300 to 450 K is only 13 mV. In addition, the studied device also shows good microwave performances with flat and wide operation regime.
Keywords :
III-V semiconductors; gallium arsenide; high-temperature electronics; indium compounds; leakage currents; microwave field effect transistors; semiconductor device breakdown; 1 micron; 1.7 to 24.5 V; 100 micron; 138 to 161 mS/mm; 300 to 450 K; InGaAs-GaAs; carrier confinement; device performances; drain-source breakdown voltage; gate-drain breakdown voltage; heterostructure FET; heterostructure field-effect transistor; high-temperature applications; leakage current reduction; microwave applications; n/sup +/-InGaAs/n-GaAs composite doped channel HFET; output conductance; temperature-dependent characteristics; transconductance; turn-on voltage; Indium compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
