• DocumentCode
    1557745
  • Title

    Ultralow leakage characteristics of ultrathin gate oxides (~3 nm) prepared by anodization followed by high-temperature annealing

  • Author

    Ting, Chieh-Chih ; Shih, Yen-Hao ; Hwu, Jenn-Gwo

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    49
  • Issue
    1
  • fYear
    2002
  • fDate
    1/1/2002 12:00:00 AM
  • Firstpage
    179
  • Lastpage
    181
  • Abstract
    The leakage current of an anodic oxide (ANO) is two orders lower than that of a rapid thermal oxide (RTO) due to the negative oxide trapped charges near the metal-ANO interface. Moreover, the ANO´s SILC characteristic is different from the RTO´s, since the charges might redistribute under a high electrical stress
  • Keywords
    MOS capacitors; MOSFET; anodisation; dielectric thin films; leakage currents; metal-insulator boundaries; rapid thermal annealing; 3 nm; ANO film; MOS capacitors; MOS devices; MOSFETs; RTA; SILC characteristic; SiO2-Si; anodic oxide; anodization; charge redistribution; high electrical stress; high-temperature annealing; leakage current; metal-oxide interface; negative oxide trapped charges; ultralow leakage characteristics; ultrathin gate oxides; Aluminum; Insulation; Leakage current; MOS capacitors; MOS devices; Oxidation; Rapid thermal annealing; Silicon; Thermal stresses; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.974766
  • Filename
    974766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1557745