Title :
RF noise characterization of MOS devices for LNA design using a physical-based quasi-3-D approach
Author :
Lin, Yi ; Obrecht, Michael ; Manku, Tajinder
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
10/1/2001 12:00:00 AM
Abstract :
A quasi-3-D method for microwave noise simulation of MOSFET is presented in this paper. This method inherently takes into account all the microscopic noise sources within the transistor at microwave frequencies. It is realized by properly transforming the 2-D noise sources to 3-D equivalent noise sources. The 2-D noise sources and their correlation term are calculated in the framework of a PDE based 2-D device simulator. Based on 3-D equivalent noise network, the four noise parameters Fmin, Rn, Ropt, and Xopt which are critical for low noise device design are calculated. A 0.5 -μm LDD nMOS transistor was simulated and the simulation results were compared to measurement data. The functional behavior of the four noise parameters at microwave frequency with bias and layout parameters is illustrated. An example for designing a low noise MOSFET for RF application is provided
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; MOSFET; equivalent circuits; field effect MMIC; microwave field effect transistors; partial differential equations; semiconductor device models; semiconductor device noise; thermal noise; 2D noise; CMOS RF; LNA design; MOS devices; MOSFET; PDE based simulator; RF noise characterization; equivalent noise network; equivalent noise sources; intrinsic noise; microwave noise simulation; physical-based quasi-3D approach; thermal noise; CMOS process; CMOS technology; Circuit noise; MOS devices; MOSFET circuits; Microwave devices; RF signals; Radio frequency; Semiconductor device modeling; Wireless communication;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
