Title :
High-voltage implanted-emitter 4H-SiC BJTs
Author :
Tang, Yi ; Fedison, Jefferey B. ; Chow, T. Paul
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Implanted-emitter, epi-base, npn 4H-SiC bipolar junction transistors (BJTs) which show maximum blocking voltage of 500 V and common-emitter current gain (/spl beta/) of 8 are demonstrated. Compared to the previous results (BV/sub CEO/ of 60 V and /spl beta/ of 40), the blocking voltage is greatly improved with reduced current gain due to a decrease of the base transport factor. The samples also show negative temperature coefficient of /spl beta/, similar to the previous samples, easing device paralleling problems.
Keywords :
ion implantation; power bipolar transistors; semiconductor device breakdown; semiconductor device reliability; silicon compounds; wide band gap semiconductors; 500 V; SiC; base transport factor; bipolar junction transistors; blocking voltage; common-emitter current gain; current gain; device paralleling problems; epi-base npn transistors; implanted-emitter transistors; negative temperature coefficient; power semiconductor devices; Annealing; Application specific integrated circuits; Argon; Bipolar transistors; Implants; Power semiconductor devices; Process control; Silicon carbide; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
