DocumentCode :
1557830
Title :
Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique
Author :
Hong, Chao-Chi ; Chang, Chang-Yun ; Lee, Chaung-Yuan ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
23
Issue :
1
fYear :
2002
Firstpage :
28
Lastpage :
30
Abstract :
A novel repeated spike oxidation (RSO) technique had been used to grow low-temperature thin-gate oxide. Around the similar effective oxide thickness extracted from the capacitance-voltage (C-V) curves under quantum mechanical effect consideration, the leakage currents of RSO samples were near one order of magnitude lower than those of typical ones. Flat band voltage shift or electron trapping in RSO oxides during current-voltage (I-V) measurement had not been observed. The reduction of interface state densities and the improvement in oxide uniformity would be the possible reasons for the reduction in leakage currents of RSO samples.
Keywords :
MIS devices; MOS capacitors; MOSFET; dielectric thin films; electron traps; interface states; leakage currents; oxidation; semiconductor-insulator boundaries; C-V curves; I-V measurement; MOS device; SiO/sub 2/-Si; capacitance-voltage curves; current-voltage measurement; electron trapping; flat band voltage shift; interface state densities; leakage current reduction; low-temperature thin-gate oxide growth; oxide uniformity; quantum mechanical effect; repeated spike oxidation technique; Capacitance-voltage characteristics; Chaos; Current measurement; Electron traps; Leakage current; Oxidation; Quantum mechanics; Rapid thermal processing; Temperature measurement; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.974802
Filename :
974802
Link To Document :
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