DocumentCode :
1557865
Title :
Reflection-type optical waveguide switch with bow-tie electrode
Author :
Li, Baojun ; Chua, Soo-jin
Author_Institution :
Singapore-MIT Alliance, Nat. Univ. of Singapore, Singapore
Volume :
20
Issue :
1
fYear :
2002
fDate :
1/1/2002 12:00:00 AM
Firstpage :
65
Lastpage :
70
Abstract :
Based on the total internal reflection and the plasma dispersion effect of SiGe alloy, an intersectional rib optical waveguide switch with bow-tie electrode has been proposed and fabricated for operating wavelengths of 1.3 and 1.55 μm. The thickness of the SiGe layer is 2.6 μm and the width is 9 μm. The branch angle of the switch is 2° and the bow-tie angle is 1.5°. The crosstalks are -19.6 dB for 1.3 μm and -21.8 dB for 1.55 μm. At both wavelengths, the extinction ratio is larger than 38.5 dB and the insertion loss is less than 1.70 dB. The switching time is about 180 ns
Keywords :
Ge-Si alloys; electrodes; integrated optics; light reflection; optical crosstalk; optical losses; optical switches; optical waveguide components; semiconductor materials; 1.3 micron; 1.55 micron; 1.7 dB; 180 ns; 2.6 micron; 9 micron; Si; SiGe alloy; SiGe layer thickness; SiGe-Si; bow-tie angle; bow-tie electrode; branch angle; crosstalks; extinction ratio; insertion loss; integrated optics; intersectional rib optical waveguide switch; operating wavelengths; optical switch; optoelectronic device; plasma dispersion effect; reflection-type optical waveguide switch; switching time; total internal reflection; Crosstalk; Dispersion; Electrodes; Extinction ratio; Germanium silicon alloys; Optical reflection; Optical switches; Optical waveguides; Plasma waves; Silicon germanium;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.974819
Filename :
974819
Link To Document :
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