Title :
Optical demultiplexing at 6 Gb/s using a semiconductor laser amplifier as an optical gate
Author :
Hansen, P.B. ; Raybon, G. ; Wiesenfeld, J.M. ; Burrus, C.A. ; Logan, R.A. ; Tanbun-Ek, T. ; Temkin, H.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
A semiconductor laser amplifier (SLA) has been employed successfully for optical demultiplexing in two-channel optical time division multiplexed system experiments at 6 and 2 Gb/s. Demultiplexing of 6-Gb/s (2-Gb/s) signals was demonstrated with a power penalty of 1.6 dB (3.0 dB) at bit error rates of 10/sup -9/. It is also shown that a reduction of the generated amplified spontaneous emission can be obtained by optical gating/demultiplexing for systems incorporating inline amplifiers. A 0.5-dB improvement in sensitivity was achieved as a result of using an SLA for demultiplexing from 2.0 to 1.0 Gb/s in a system with one inline Er/sup 3+/-doped fiber amplifier.<>
Keywords :
multiplexing equipment; optical communication equipment; semiconductor junction lasers; superradiance; time division multiplexing; 1.0 Gbit/s; 2 Gbit/s; 6 Gbit/s; Er/sup 3+/-doped fiber amplifier; TDM; amplified spontaneous emission; bit error rates; inline amplifiers; optical demultiplexing; optical gate; optical gating; power penalty; semiconductor laser amplifier; sensitivity; two-channel optical time division multiplexed system; Bit error rate; Demultiplexing; Erbium; Optical amplifiers; Optical sensors; Semiconductor lasers; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission; Time division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
