DocumentCode
1559936
Title
Temperature dependence of Sb-heterostructure millimetre-wave diodes
Author
Schulman, J.N. ; Holabird, K.S. ; Chow, D.H. ; Dunlap, H.L. ; Thomas, S. ; Croke, E.T.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
Volume
38
Issue
2
fYear
2002
fDate
1/17/2002 12:00:00 AM
Firstpage
94
Lastpage
95
Abstract
The current against voltage characteristics of Sb-heterostructure zero-bias millimetre-wave diodes were measured from 15 to 81°C. No significant variation in the zero-bias junction resistance or curvature coefficient was found. The new diode is the first that provides temperature independent direct detection capability at and beyond W-band
Keywords
III-V semiconductors; aluminium compounds; characteristics measurement; gallium compounds; indium compounds; millimetre wave diodes; semiconductor device measurement; semiconductor heterojunctions; 15 to 81 degC; III V semiconductors; InAs-GaAlSb; Sb-heterostructure diodes; W-band; current-voltage characteristics; curvature coefficient; junction resistance; millimetre-wave diodes; temperature independent direct detection; zero-bias diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020070
Filename
981589
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