DocumentCode :
1560441
Title :
Application determination of single-event transient characteristics in the LM 111 comparator
Author :
Sternberg, A.L. ; Massengill, L.W. ; Schrimpf, R.D. ; Calvel, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Tennessee State Univ., Nashville, TN, USA
Volume :
48
Issue :
6
fYear :
2001
fDate :
12/1/2001 12:00:00 AM
Firstpage :
1855
Lastpage :
1858
Abstract :
The effect of an integrated circuit´s application can have a profound effect on its single-event transient response. This paper demonstrates how small changes in the application, of which the integrated circuit is a part, can change which devices are sensitive and the critical charge to upset. We show this in a simulation study using an undervoltage detector based on the LM111 voltage comparator. We found three different transistors to be the most sensitive device, depending on the application. When the sensitive transistor changed, the critical charge changed by several orders of magnitude
Keywords :
analogue integrated circuits; circuit simulation; comparators (circuits); detector circuits; radiation effects; transient response; LM111 voltage comparator; analog comparator; critical charge to upset; simulation study; single-event transient characteristics; transient response; undervoltage detector; Analog circuits; Application specific integrated circuits; Capacitance; Circuit simulation; Circuit testing; Detectors; Digital circuits; Performance evaluation; Power supplies; Threshold voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.983142
Filename :
983142
Link To Document :
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