Title :
1/f noise in proton-irradiated SiGe HBTs
Author :
Jin, Zhenrong ; Niu, Guofu ; Cressler, John D. ; Marshall, Cheryl J. ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert A. ; Harame, David L.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Investigates the impact of proton irradiation on the 1/f noise in ultra-high-voltage chemical-vapor deposition SiGe heterojunction bipolar transistors. The relative degradation of 1/f noise shows a strong dependence on device geometry. Both the geometry dependence and the bias dependence of 1/f noise change significantly after exposure to 2×1013 p/cm2 protons. An expression describing the 1/f noise is derived and used to explain the experimental observations
Keywords :
1/f noise; Ge-Si alloys; heterojunction bipolar transistors; power bipolar transistors; proton effects; semiconductor device noise; semiconductor materials; 1/f noise; SiGe; bias dependence; device geometry; proton-irradiated HBTs; ultra-high-voltage transistors; Circuit noise; Current measurement; Degradation; Equivalent circuits; Fluctuations; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise measurement; Silicon germanium;
Journal_Title :
Nuclear Science, IEEE Transactions on
