Title :
Oscillation of spatial distribution of electric field and carrier density in p-i-n semiconductor structure
Author :
Usanov, D.A. ; Gorbatov, S.S. ; Kvasko, V.Yu. ; Fadeev, A.V. ; Kalyamin, A.A.
Author_Institution :
Saratov State Univ., Saratov, Russia
Abstract :
A numerical calculation of the distribution of the electric field and the carrier concentration in the p-i-n diode under forward bias, as well as experimental studies of these characteristics using near-field microwave microscope have been made. The principle importance of taking into account the dependence of diffusion coefficient of the charge carriers on the electric field in the description of the processes occurring in the p-i-n diodes has been shown. The numerical results are in qualitative agreement with experiment.
Keywords :
carrier density; diffusion; electric fields; oscillations; p-i-n diodes; carrier concentration; carrier density; charge carriers; diffusion coefficient; electric field; forward bias; near-field microwave microscope; oscillation; p-i-n diode; p-i-n semiconductor structure; spatial distribution; PIN photodiodes;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959328
