Title :
Luminescence analysis of radiation effects in multijunction solar cells for space
Author :
Sugimoto, Hiroki ; Tajima, Michio ; Hase, S. ; Imaizumi, Mitsuru
Author_Institution :
Inst. of Space & Astronautical Sci., Japan Aerosp. Exploration Agency, Japan
Abstract :
Electron irradiation effects on each sub cell of InGaP2/GaAs/Ge triple junction solar cells have been investigated by selective excitation photoluminescence (PL) and electroluminescence (EL) spectroscopy. PL intensity of band-edge emission from InGaP2 cell hardly degraded after irradiation, while that of GaAs cell decreased considerably. The degradation rate of Ge cell was less than that of GaAs cell. Shape of PL spectra from GaAs cell changed dramatically. The degradation tendency in EL measurement was similar to PL spectroscopy. These findings showed clearly that GaAs cell has low radiation tolerance and InGaP2 cell has fairly high radiation hardness. We also concluded Ge cell is superior in radiation tolerance to GaAs cell.
Keywords :
III-V semiconductors; aerospace instrumentation; electroluminescence; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; photoluminescence; semiconductor junctions; solar cells; InGaP2-GaAs-Ge; band-edge emission; electroluminescence; electron irradiation effects; multijunction solar cells; photoluminescence; radiation effects; radiation hardness; radiation tolerance; triple junction solar cells; Degradation; Electroluminescence; Electrons; Gallium arsenide; Luminescence; Photoluminescence; Photovoltaic cells; Radiation effects; Shape; Spectroscopy;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488261
