Title :
Optical properties of PECVD and UVCVD SiNx:H antireflection coatings for silicon solar cells
Author :
Leliévre, J.F. ; Kaminski, Ashley ; Boyeaux, J.-P. ; Monna, R. ; Lemiti, M.
Author_Institution :
Laboratoire de Physique de la Matiere, Inst. Nat. des Sci. Appliquees de Lyon, Villeurbanne, France
Abstract :
A complete study of the optical properties has been achieved for hydrogenated silicon nitride SiNx:H obtained by either low frequency (40 kHz) plasma enhanced chemical vapour deposition (LF-PECVD) or by another low temperature deposition technique: ultraviolet photo-assisted CVD (UVCVD). spectroscopic ellipsometry measurements were carried out on a large number of samples. The results were gathered in a data library in order to compute the wavelength-dependant reflection, absorption and transmission coefficients through the layers. Different optical behaviors were observed according to the deposition technique, with stronger absorption and hence smaller optical gaps for UVCVD films. This is believed to be due to the formation in the SiNx matrix of amorphous silicon (a-Si) clusters, which seem to be much bigger than those obtained in PECVD layers.
Keywords :
absorption coefficients; antireflection coatings; elemental semiconductors; ellipsometry; energy gap; extinction coefficients; hydrogen; optical films; plasma CVD; refractive index; silicon; silicon compounds; solar cells; ultraviolet spectra; PECVD; Si; SiNx:H; UVCVD; absorption coefficients; amorphous silicon clusters; antireflection coatings; hydrogenated silicon nitride; low frequency plasma enhanced chemical vapour deposition; low temperature deposition technique; optical gaps; silicon solar cells; spectroscopic ellipsometry; transmission coefficients; ultraviolet photoassisted CVD; wavelength-dependant reflection; Chemical vapor deposition; Electromagnetic wave absorption; Frequency; Optical films; Plasma chemistry; Plasma measurements; Plasma properties; Plasma temperature; Plasma waves; Silicon compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488330
