Title :
Low operating voltage and short settling time CMOS charge pump for MEMS applications
Author :
Hong, David S. ; El-Gamal, Mourad N.
Author_Institution :
Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada
Abstract :
A 16-stage constant-threshold-voltage type charge pump was designed and fabricated in a standard CMOS 0.18-μm process. With an input clock voltage of less than 1.2 V, the maximum possible output voltage is 14.8 V, with a 65 psec rise time. The charge pump employs metal-insulator-metal (MIM) capacitors in order to minimize the chip area (0.8 × 0.9 mm2). This circuit is intended for generating on-chip actuation voltages for microelectro-mechanical devices and systems (MEMS).
Keywords :
CMOS integrated circuits; low-power electronics; micromechanical devices; 0.18 micron; 1.2 V; 14.8 V; 65 ps; CMOS constant-threshold-voltage charge pump; MEMS device; MIM capacitor; low-voltage operation; settling time; Application software; CMOS process; CMOS technology; Capacitors; Charge pumps; Circuits; Low voltage; Micromechanical devices; Radiofrequency microelectromechanical systems; Switches;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1206254