Stress measurement of SiO/sub 2/-polycrystalline silicon structures for micromechanical devices by means of infrared spectroscopy technique

Author

Marco, S. ; Samitier, J. ; Ruiz, O. ; Morante, J.R. ; Esteve-Tinto, J. ; Bausells, J.

Author_Institution

Dept. Fisica Aplicada i Electron., Barcelona Univ., Spain

fYear

1991

Firstpage

209

Lastpage

212

Abstract

FTIR (Fourier-transform infrared) spectroscopy was used to analyze polysilicon-oxide-silicon structures. The results obtained show that this technique is adequate for measuring induced stress produced by technological processes in micromechanics. Variations were observed in the absorption peak of the oxide among different samples depending on the technological characteristics. X-ray diffraction was also used to analyze the state of stress in the polysilicon layer. The two kinds of measurements are clearly correlated.<>

Keywords

Fourier transform spectroscopy; X-ray diffraction examination of materials; elemental semiconductors; infrared spectroscopy; micromechanical devices; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; stress measurement; FTIR; Si-SiO/sub 2/-Si; X-ray diffraction; absorption peak; induced stress; infrared spectroscopy; micromechanical devices; micromechanics; polysilicon; sensors; Electromagnetic wave absorption; Infrared spectra; Interference; Micromechanical devices; Position measurement; Reflectivity; Silicon; Spectroscopy; Strain measurement; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.148839

Filename

148839