Title :
Progress in up-scaling of thin film silicon solar cells by large-area PECVD KAI systems
Author :
Meier, J. ; Kroll, U. ; Spitznagel, J. ; Benagli, S. ; Roschek, T. ; Pfanner, G. ; Ellert, C. ; Androutsopoulos, G. ; Hugli, A. ; Nagel, Michael ; Bucher, C. ; Feitknecht, L. ; Büchel, G. ; Büchel, A.
Author_Institution :
Unaxis SPTec, Neuchatel, Switzerland
Abstract :
UNAXIS KAI PECVD reactors developed for AM LCD technology have been demonstrated to possess a high potential for thin film silicon solar cells based on amorphous and microcrystalline silicon. For the next generation of thin film modules with highly effective light-trapping LP-CVD ZnO large-area deposition is developed at Unaxis as well, in combination with a very simple but effective back reflector concept. A first prototype module of 0.447 m2 active area with 7.1% initial efficiency has been achieved for amorphous silicon. Micromorph mini-modules were prepared with 9.3% initial aperture efficiency. All important module fabrication steps are under development at Unaxis for a complete line concept.
Keywords :
amorphous semiconductors; crystal microstructure; elemental semiconductors; plasma CVD; prototypes; radiation pressure; silicon; solar cells; thin film devices; 7.1 percent; 9.3 percent; AM LCD technology; PECVD KAI systems; Si; amorphous silicon; back reflector; light-trapping; microcrystalline silicon; micromorph minimodules; thin film silicon solar cells; Amorphous materials; Amorphous silicon; Apertures; Fabrication; Inductors; Photovoltaic cells; Prototypes; Semiconductor thin films; Sputtering; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488418
