Separation of the I-V curve of each component cell of multi-junction solar cells

Characterization of the performance of multi-junction devices (solar cells and modules), such as the a-Si/thin-film c-Si structure, includes more technological complexity than that of single-junction devices. It is useful to understand the effect of the spectrum and irradiance of the incident light on the performance of the multi-junction devices, in order to estimate their performance under various climate conditions. Characteristics of multi-junction devices depend on the photocurrent generated by the component cells and their I-V curves. Therefore, information on the I-V curve of each component cell is important to characterize the devices precisely. In this study, a method to separate the I-V curve of each component cell of the monolithic multi-junction devices is successfully developed.