Title :
Temperature dependence of light-induced degradation in amorphous silicon solar cells
Author :
Korostyshevsky, Aaron ; Hausgen, Paul E. ; Granata, J.E. ; Sahistrom, T.D.
Author_Institution :
Dept. of Phys. & Astron., Toledo Univ., OH, USA
Abstract :
When exposed to light, amorphous silicon solar cells undergo a reduction in performance that is caused by structural changes and defect formation. Annealing has been shown to reverse these changes. The goal of this study is to characterize the degradation at different temperatures to create a predictive model of this behavior. A secondary goal is to compare the degradation levels between double junction and triple junction solar cells and between different load conditions during illumination. By observing changes in performance throughout an extended period of continuous light soaking at air mass zero (AM0), it is possible to simulate the degradation that would occur in the different thermal environments of outer space.
Keywords :
amorphous semiconductors; annealing; elemental semiconductors; semiconductor device testing; semiconductor junctions; silicon; solar cells; Si; air mass zero; amorphous silicon solar cells; annealing; defect formation; double junction solar cells; light soaking; light-induced degradation; triple junction solar cells; Amorphous silicon; Annealing; Costs; Degradation; Lighting; Photovoltaic cells; Space vehicles; Temperature dependence; Testing; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488435